| PART |
Description |
Maker |
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| PHL2143 PH1214-3L |
Radar Pulsed Power Transistor3W
Radar Pulsed Power Transistor/ 3W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管的3W毫秒脉冲0％的责任1日至1号吉
|
Tyco Electronics
Velleman, Inc.
|
| MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
| 1011LD110 |
RF Power Transistors: AVIONICS
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
| BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor
LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
| PH2931-I3 PH2931-135S |
Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: -40°C to 85°C
Radar Pulsed Power Transistor/ 135W/ 20ms Pulse/ 1% Duty 2.9 - 3.1 GHz
Radar Pulsed Power Transistor, 135W, 20ms Pulse, 1% Duty 2.9 - 3.1 GHz 雷达脉冲功率晶体管，135W0毫秒脉冲1％的责任二月九日至三月一日吉
|
Tyco Electronics
|
| PH2729-8.5M |
Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
